题目内容

N-EMOS external working conditions should includs that the substrate U-electrode connect to lowest potential of the circuit or to the S-electrode n (to guarantee source-drain PN junction inversion)。Above statement is ( )。

A. True
B. Fault
Can't judge
D.

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The unsaturated region of FET corresponds to the amplification region of triode。Above statement is ( )。

A. True
B. Fault
Can't judge
D.

ID of FET negative temperature characteristic;IC of triode has positive temperature characteristics。Above statement is ( )。

A. True
B. Fault
Can't judge
D.

P Channel Enhanced Field Effect Transistor(N-DMOS)at saturation,Their external working conditions are ( )

A. VGSVGS-VGS(th)
B. VGS>VGS(th) VDS>VGS-VGS(th)
C. VGS>VGS(th) VDS D. VGS

When the FET works, both electrons and holes are involved in conducting electricity, so it is called bipolar device. Above statement is ( )。

A. True
B. Fault
Can't judge
D.

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