题目内容
When the metal voltage is small positive, the state of ideal MOS capacitor (n channel silicon) is ( ).
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When the metal voltage is zero, the state of ideal MOS capacitor (n channel silicon) is ( ).
The work function of the n+ poly silicon is ( ) than that of Si in real n channel MOSFET.
The depletion layer charge is ( ) the inversion region charge in the inversion state MOSFET.
There are ( ) in the SiO2 and Si interface. A ( ) is required to achieve the flat band condition.
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