题目内容

整流、电容滤波电路中,滤波电容的接法是()。

A. 与负载电阻RL串联
B. 与整流二极管并联
C. 与负载电阻RL并联

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N Channel Enhanced Field Effect Transistor (N-EMOS) at saturation，it's grid source voltagev VGS is（）：

A. Equal to 0
B. Negative polarity
C. Positive polarity
D. Unable to determine polarity

P Channel Enhanced Field Effect Transistor（P-EMOS）at saturation，Their external working conditions are （）

A. VGSVGS-VGS(th）
B. VGS>VGS(th) VDS>VGS-VGS(th）
C. VGS>VGS(th) VDS D. VGS

N-EMOS external working conditions should includs that the substrate U-electrode connect to lowest potential of the circuit or to the S-electrode n (to guarantee source-drain PN junction inversion)。Above statement is （）。

A. True
B. Fault
Can't judge
D.

The unsaturated region of FET corresponds to the amplification region of triode。Above statement is （）。

A. True
B. Fault
Can't judge
D.