The band gap of AlGaAs is ( ) than that of GaAs.
A. larger
B. smaller
C. as same as
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The mobility of GaAs is ( ) than that of Si.
A. smaller
B. as same as
C. larger
For an n-type GaAs MESFET, the work function difference in the gate junction is:
A. qΦm>qΦs
B.qΦm C.qΦm=qΦs
The advantages of HEMTs include ( ).
A. high resistance
B. large carrier density
C. high carrier mobility
D. easily fabricated
What is the center of Krashen’s second language learning theory?
A. The monitor model
B. The learning/acquisition distinction
C. The affective filter hypothesis
D. The natural order hypothesis
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