题目内容

For a MESFET, the contact between the gate and channel is ( ).

A. Ohmic contact
B. Schottky contact
C. Hetero contact

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The band gap of AlGaAs is ( ) than that of GaAs.

A. larger
B. smaller
C. as same as

The mobility of GaAs is ( ) than that of Si.

A. smaller
B. as same as
C. larger

For an n-type GaAs MESFET, the work function difference in the gate junction is:

A. qΦm>qΦs
B.qΦm C.qΦm=qΦs

The advantages of HEMTs include ( ).

A. high resistance
B. large carrier density
C. high carrier mobility
D. easily fabricated